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PRELIMINARY DATA SHEET
GaAs MES FET
NE85001 SERIES
1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
DESCRIPTION
The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in `99' package. The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the thermal resistance, the device has a PHS. (Plated Heat Sink) NEC's strigent quality assurance and test procedures assure the highest reliability and performance.
FEATURES
* Class A operation * High power output * High reliability
PHYSICAL DIMENSIONS NE8500100 (CHIP) (unit: m)
65 170
146
SELECTION CHART
100 PERFORMANCE SPECIFIED PART NUMBER FORM Pout (**) (dBm) GL (**) (dB) USABLE FREQUENCY (GHz) 2.0 to 10 100 100 780
640
NE8500100(*) NE8500100-WB NE8500100-RG NE8500199
chip
28.5 min
9.0 typ
PACKAGE CODE-99 (unit: mm)
package 28.5 min 9.0 typ 2.0 to 10 4.0 MIN BOTH LEADS SOURCE 1.0 0.1 GATE
2.2 0.3 2 PLACES
*
WB, RG indicate a type of containers for chips. WB: black carrier, RG: ring,: gel-pack,
** Specified at the condition at the last page.
4.3 0.2
4.0
DRAIN 0.6 0.1 5.2 0.3 11.0 0.3 15.0 0.3 0.1 0.2 MAX. 1.7 0.15 6.0 0.2 5.0 MAX. 1.2
Document No. P10968EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan
(c)
1996
NE85001 SERIES
ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage Gate to Drain Voltage Gate to Source Voltage Total Power Disipation(*) Drain Current Gate Current Channel Temperature Storage Temperature VDSX VGDX VGSX PT ID IG Tch Tstg 15 -18 -12 6.0 1.12 6.0 175 -65 to 175 V V V W A mA C C *TC = 25 C RECOMMENDING OPERATION RANDGE
CHARACTERISTIC Drain to Source Voltage Channel Temperature Input Power Gate Resistance SYMBOL VDS Tch Gcomp Rg MIN. 9 - - - TYP. - - - - MAX. 10 130 3 1 UNIT V C dBcomp k
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC Saturated Drain Current Pinch-off Voltage Transconductance Thermal Resistance SYMBOL Idss VP gm Rth MIN. 430 -3.0 - - TYP. - - 300 - MAX. 860 -1.0 - 30 UNIT mA V mS C/W TEST CONDITIONS Vds = 2.5 V, Vgs = 0 V Vds = 2.5 V, Ids = 4 mA Vds = 2.5 V, Ids = Idss
PERFORMANCE SPECIFICATIONS (TA = 25 C)
NE8500100 NE8500100-WG NE8500100-RG CHIP MIN. 28.5 TYP. - MAX. - MIN. 28.5
PART NUMBER
NE8500199 UNIT 99 TYP. - MAX. - dBm f = 7.2 GHz Vds = 10 V Ids = 200 mA set Rg = 1 k Pin = 21.0 dBm(*) TEST CONDITIONS
PACKAGE CODE CHARACTERISTIC Output Power SYMBOL PO
Gate to source Current
Igs
-2.0
-
2.0
-2.0
-
2.0
mA
Linear Gain
GL
-
9
-
-
9
-
dB
Pin 11 dBm (**)
*
Pin for Pout specification.
** The same conditions as the above except this.
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NE85001 SERIES
TYPICAL CHARACTERISTICS (TA = 25 C) NE8500199
OUTPUT POWER vs. INPUT POWER 30
Pout - Output Power - dBm
VDS = 10 V Ids = 200 mA set f = 7.2 GHz
25
300 250 200
20
ID (mA)
15
10
15 20 Pin - Input Power - dBm
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NE85001 SERIES
S-PARAMETER
VDS = 10 V, IDS = 200 mA, VGS = -1.260 V, IG = 0.0 mA, RG = 1 k FREQUENCY S11 GHz MAG 0.100 0.500 1.000 1.500 2.000 2.500 3.000 3.500 3.600 3.700 3.800 3.900 4.000 4.200 4.400 4.500 4.600 4.800 5.000 5.200 5.400 5.500 5.600 5.800 6.000 6.200 6.400 6.500 6.600 6.800 7.000 7.200 7.400 7.500 7.600 7.800 8.000 8.200 8.400 8.500 8.600 8.800 9.000 9.200 9.400 9.500 9.600 9.800 10.000 0.990 0.916 0.869 0.851 0.840 0.831 0.826 0.824 0.825 0.825 0.827 0.829 0.829 0.821 0.808 0.803 0.799 0.790 0.784 0.777 0.771 0.767 0.764 0.758 0.751 0.742 0.731 0.726 0.721 0.707 0.689 0.676 0.657 0.649 0.640 0.621 0.604 0.590 0.584 0.577 0.574 0.570 0.571 0.583 0.599 0.611 0.619 0.631 0.631 S21 ANG -22.7 -91.1 -132.1 -152.9 -166.1 -175.9 176.0 168.8 167.5 166.0 164.4 162.8 161.0 157.2 153.9 152.5 151.0 147.9 144.7 141.4 137.7 135.9 133.9 130.1 125.8 121.3 116.6 114.1 111.6 106.1 100.2 93.9 87.1 83.4 79.9 71.8 63.2 53.4 42.7 37.0 31.2 18.8 5.9 -7.6 -21.4 -28.5 -35.9 -50.4 -62.9 MAG 14.418 10.211 6.444 4.610 3.591 2.975 2.601 2.341 2.291 2.253 2.230 2.187 2.127 2.053 1.976 1.963 1.970 1.944 1.929 1.923 1.897 1.916 1.916 1.887 1.928 1.896 1.951 1.951 1.936 1.973 1.957 2.004 2.002 2.013 2.045 2.042 2.067 2.078 2.088 2.102 2.083 2.088 2.072 2.044 2.040 2.030 2.008 1.943 1.812 ANG 165.5 123.3 94.8 76.6 61.9 49.1 37.3 26.0 23.4 20.7 18.1 16.1 13.4 8.6 5.6 3.4 0.8 -3.1 -8.6 -12.8 -18.5 -20.7 -22.7 -28.5 -33.5 -39.1 -44.8 -47.2 -50.6 -56.8 -62.4 -69.1 -74.9 -78.8 -82.4 -88.6 -96.6 -103.5 -112.0 -115.5 -119.1 -127.8 -135.7 -144.6 -153.1 -157.9 -162.9 -173.2 177.3 MAG 0.007 0.024 0.031 0.034 0.038 0.042 0.047 0.053 0.055 0.056 0.059 0.063 0.066 0.072 0.074 0.075 0.077 0.080 0.084 0.089 0.093 0.097 0.100 0.105 0.113 0.116 0.126 0.130 0.133 0.143 0.149 0.163 0.171 0.177 0.185 0.195 0.206 0.216 0.227 0.232 0.237 0.246 0.253 0.264 0.274 0.277 0.281 0.284 0.280 S12 ANG 70.1 47.7 33.6 29.0 28.1 26.7 25.4 27.4 27.0 26.5 26.8 26.5 25.4 20.1 16.8 15.2 13.9 12.6 9.3 7.4 4.5 3.1 1.8 -1.9 -4.8 -8.0 -11.6 -13.2 -15.9 -20.4 -23.9 -28.9 -33.3 -36.8 -39.6 -45.0 -51.8 -57.8 -65.4 -68.0 -71.2 -78.3 -84.7 -92.3 -99.3 -103.2 -107.4 -115.9 -123.6 MAG 0.065 0.175 0.221 0.241 0.260 0.278 0.296 0.313 0.317 0.323 0.333 0.340 0.345 0.353 0.343 0.337 0.340 0.341 0.340 0.349 0.347 0.358 0.363 0.358 0.381 0.369 0.397 0.396 0.387 0.411 0.402 0.424 0.425 0.431 0.448 0.452 0.465 0.478 0.492 0.500 0.501 0.519 0.534 0.545 0.568 0.577 0.583 0.600 0.587 S22 ANG -64.6 -126.4 -149.1 -159.2 -165.6 -170.8 -174.6 -177.8 -179.2 179.8 179.4 178.7 176.3 171.0 167.3 166.2 164.8 163.2 159.8 158.6 155.6 154.2 154.5 151.6 149.5 146.8 144.2 144.2 141.8 138.6 137.1 133.8 132.3 129.4 127.2 123.8 117.2 112.7 104.8 102.7 100.1 93.0 87.2 80.1 73.6 69.7 65.8 56.3 47.0
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NE85001 SERIES
CHIP HANDLING DIE ATTACHMENT Die attach can be accomplished with a Au-Sn (300 10 C) performs in a forming gas environment. Epoxy die attach is not recommended. BONDING Gate and drain bonding wires should be minimum length, semi-hard gold wire (3 - 8 % elongation) 30 microns or less in diameter. Bonding should be performed with a wedge tip that has a taper of approximately 15 %. Die attach and bonding time should be kept to a minimum. As a general rule, the bonding operation should be kept within a 280 C _ 5 minute curve. If longer periods are required, the temperature should be lowered. PRECAUTIONS The user must operate in a clean, dry environment. The chip channel is glassivated for mechanical protection only and does not preclude the necessity of a clean environment. The bonding equipment should be periodically checked for sources of surge voltage and should be properly grounded at all times. In fact, all test and handling equipment should be grounded to minimize the possibilities of static discharge.
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NE85001 SERIES
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product.
M4 94.11
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